| Autor: |
Liu, Zhiqiang, Melton, Andrew G., Yi, Xiaoyan, Wang, Jianwei, Kucukgok, Bahadir, Kang, Jun, Lu, Na, Wang, Junxi, and, Jinmin Li, Ferguson, Ian |
| Zdroj: |
Applied Physics Express (APEX); April 2013, Vol. 6 Issue: 4 p042104-042104, 1p |
| Abstrakt: |
In this work, we propose a novel approach to reduce the ionization energy of acceptors in GaN through Zn-Mg codoping. The characteristics of the defect states and the valence-band maximum (VBM) were investigated via first-principles calculation. Our results indicated that the original VBM of the host GaN could be altered by Zn-Mg codoping, thus improving the p-type dopability. We show that the calculated ionization energy e(0/-) of the Zn-Mg acceptor is only 117 meV, which is about 90 meV shallower than that of the isolated Mg acceptor. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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