| Autor: |
Zhou, Xiuju, Li, Qiang, Wah, Chak, and, Tang, May, Kei |
| Zdroj: |
Applied Physics Express (APEX); October 2012, Vol. 5 Issue: 10 p104201-104201, 1p |
| Abstrakt: |
Inverted-type In0.51Al0.49As/In0.53Ga0.47As metal-oxide-semiconductor high-electron-mobility transistor grown by metal organic chemical vapor deposition on a Si substrate was demonstrated. 8 nm atomic-layer-deposited Al2O3 was used as gate dielectric. N++ InGaAs with an electron density of 4.5x1019 cm-3 was selectively regrown in the source/drain regions to reduce parasitic resistance while eliminating the conventional gate recess etching. 130-nm channel-length devices have exhibited a drain current up to 2.03 A/mm at Vds=0.6 V and an ultralow on-resistance of 163 O um. An effective mobility of 2975 cm2 V-1 s-1 was also extracted, indicating the high-quality epitaxial growth by metal organic chemical vapor deposition. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
