| Autor: |
Arapov, Yurii G., Gudina, Svetlana V., Klepikova, Anna S., Neverov, Vladimir N., Novokshonov, Sergey G., Okulov, Vsevolod I., Charikova, Tatiana B., Harus, German I., Shelushinina, Nina G., Yakunin, Mikhail V. |
| Zdroj: |
Diffusion and Defect Data Part B: Solid State Phenomena; April 2014, Vol. 215 Issue: 1 p208-213, 6p |
| Abstrakt: |
The longitudinal ρxx(B) and Hall ρxy(B) magnetoresistances are investigated in the integer quantum Hall effect regime in n-InGaAs/GaAs double quantum well nanostructures in the magnetic fields B up to 16 T at temperatures T = (0.05-4.2) K before and after IR illumination. The analysis of the quantum Hall effect plateau-plateau transitions based on the scaling hypothesis with regard to electron-electron interaction was carried out. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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