| Autor: |
Florentin, Matthieu, Montserrat, Josep, Brosselard, Pierre, Henry, Anne, Godignon, Philippe |
| Zdroj: |
Materials Science Forum; February 2014, Vol. 778 Issue: 1 p591-594, 4p |
| Abstrakt: |
This paper deals with the comparison of several MOS structures with different rapid thermal oxidation processes (RTO) carried out on Off and On-axis SiC material. A first set contains MOS capacitance structures on n-epitaxial layers, while a second set of MOS capacitance are built on p-implanted layers. Both sets include On and Off-Axis angle cuts. Furthermore, n-MOSFETs have been fabricated on On-axis p-implanted layers with the best oxidation process selected from the MOS capacitance study. The final objective is to show the performances of these On-axis p-implanted n-MOSFETs and to evidence the associated lower surface roughness at the SiO2/SiC interface. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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