| Autor: |
Twu, M.J., Kao, W.C., Lin, K.C., Chen, K.D., Kua, Y.T., Liu, C.H. |
| Zdroj: |
Applied Mechanics and Materials; December 2013, Vol. 481 Issue: 1 p235-240, 6p |
| Abstrakt: |
The strained nitride capping layer (contact etch stop layer, CESL) is used as a stress booster that make transistor improvement. In this research, the n-MOSFET was simulated combining CESL tensile stressor. The stress in channel region for various part of CESL(CESL-top, CESL-lateral, CESL-bottom) were analysed and compared. The result of simulation explains how the CESL transmits the intrinsic stress to the channel. The relations between different CESL structures are discussed in this study. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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