Unintentional annealing of the active layer in the growth of InGaN/GaNquantum well light‐emitting diode structures
Autor: | Mickevičius, J., Dobrovolskas, D., Šimonytė, I., Tamulaitis, G., Chen, C.‐Y., Liao, C.‐H., Chen, H.‐S., Yang, C. C. |
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Zdroj: | Physica Status Solidi (A) - Applications and Materials Science; August 2013, Vol. 210 Issue: 8 p1657-1662, 6p |
Databáze: | Supplemental Index |
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