Unintentional annealing of the active layer in the growth of InGaN/GaNquantum well light‐emitting diode structures

Autor:	Mickevičius, J., Dobrovolskas, D., Šimonytė, I., Tamulaitis, G., Chen, C.‐Y., Liao, C.‐H., Chen, H.‐S., Yang, C. C.
Zdroj:	Physica Status Solidi (A) - Applications and Materials Science; August 2013, Vol. 210 Issue: 8 p1657-1662, 6p
Databáze:	Supplemental Index
Externí odkaz:	Zobrazit plný text záznamu Plný text