| Autor: |
Gabáni, S., Bat’ko, I., Bat’ková, M., Flachbart, K., Gaz̆o, E., Pristás̆, G., Takác̆ová, I., Bogach, A., Sluchanko, N., Shitsevalova, N. |
| Zdroj: |
Journal of the Korean Physical Society; May 2013, Vol. 62 Issue: 10 p1547-1549, 3p |
| Abstrakt: |
Our studies of Ho1−xLuxB12solid solutions have shown that the temperature of antiferromagnetic (AF) order in geometrically frustrated system of HoB12(TN= 7.4 K) is linearly suppressed to zero temperature, i.e.TN→ 0, as lutetium concentration increases to x→xc≈ 0.9. In this contribution, we present original results of electrical resistivity measurements on Ho1−xLuxB12single crystalline samples with x= 0, 0.2, 0.5, 0.7, 0.9, 1 in the temperature range 0.06–300 K and in magnetic fields (B) up to 8 T. Complex Bvs TNphase diagrams were received from precise temperature ρ(T) and field ρ(B) dependences of resistivity with several AF phases for x≤ 0.5 pointing to a possibility of quantum critical point at xc≈ 0.9. The scattering of conduction electrons in the AF phase and in the paramagnetic phase as well as Hall effect results are analyzed and discussed for various concentrations x, when magnetic dilution increases with the increasing content of nonmagnetic Lu ions in the Ho1−xLuxB12system. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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