| Autor: |
Veloso, Anabela, Chew, Soon Aik, Higuchi, Yuichi, Ragnarsson, Lars-$Å$ke, Simoen, Eddy, Schram, Tom, Witters, Thomas, Van Ammel, Annemie, Dekkers, Harold, Tielens, Hilde, Devriendt, Katia, Heylen, Nancy, Sebaai, Farid, Brus, Stephan, Favia, Paola, Geypen, Jef, Bender, Hugo, Phatak, Anup, Chen, Michael S., Lu, Xinliang, Ganguli, Seshadri, Lei, Yu, Tang, Wei, Fu, Xinyu, Gandikota, Srinivas, Noori, Atif, Brand, Adam, Yoshida, Naomi, Thean, Aaron, Horiguchi, Naoto |
| Zdroj: |
Japanese Journal of Applied Physics; April 2013, Vol. 52 Issue: 4 p04CA02-04CA07, 6p |
| Abstrakt: |
This work reports on aggressively scaled replacement metal gate, high-$k$ last devices (RMG-HKL), exploring several options for effective work function (EWF) engineering, and targeting logic high-performance and low-power applications. Tight low-threshold voltage ($V_{\text{T}}$) distributions for scaled NMOS devices are obtained by controlled TiN/TiAl-alloying, either by using RF-physical vapor deposition (RF-PVD) or atomic layer deposition (ALD) for TiN growth. The first technique allows optimization of the TiAl/TiN thicknesses at the bottom of gate trenches while maximizing the space to be filled with a low-resistance metal; using ALD minimizes the occurrence of preferential paths, at gate sidewalls, for Al diffusion into the high-$k$ dielectric, reducing gate leakage ($J_{\text{G}}$). For multi-gate fin field-effect transistors (FinFETs) which require smaller EWF shifts from mid-gap for low-$V_{\text{T}}$: 1) conformal, lower-$J_{\text{G}}$ ALD-TiN/TaSiAl; and 2) Al-rich ALD-TiN by controlled Al diffusion from the fill-metal are demonstrated to be promising candidates. Comparable bias temperature instability (BTI), improved noise behavior, and slightly reduced equivalent oxide thickness (EOT) are measured on Al-rich EWF-metal stacks. |
| Databáze: |
Supplemental Index |
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