Epitaxial structures based on compensated GaAs for g- and X-ray detectors
| Autor: | Budnitsky, D. L., Germogenov, V. P., Guschin, S. M., Larionov, A. A., Porokhovnichenko, L. P., Potapov, A. I., Tolbanov, O. P., Vorobiev, A. P. |
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| Zdroj: | Nuclear Instruments and Methods in Physics Research Section A; 2001, Vol. 466 Issue: 1 p33-38, 6p |
| Databáze: | Supplemental Index |
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