| Autor: |
Yuan, Zhen Wen, Wang, Lin Jun, Zhang, Ji Jun, Wei, Gao Li, Qin, Kai Feng, Min, Jia Hua, Liang, Xiao Yan, Xia, Yi Ben |
| Zdroj: |
Applied Mechanics and Materials; February 2013, Vol. 295 Issue: 1 p322-325, 4p |
| Abstrakt: |
CdMnTe is one of the key materials for room temperature X-ray and gamma-ray detectors on Environmental Analysis and Monitoring. In this paper, the homogeneous Cd1-xMnxTe (x = 0.1) single crystal ingot was grown by the vertical Bridgman method. The compositional analysis was carried out by SEM/EDS. The Te inclusions were revealed by the IR transmission spectra. In dopant distribution was determined by ICP-AES measurement. The resistivity of CdMnTe was cha-racterized by I-V method. It was found that the segregation coefficient of Mn was 0.97. In dopant contents within 3 to 21 ppm of the ingot were found. The Te inclusions were mainly 8.2-28.3m in size and 1×105-1.5×107cm-3in concentration. I–V measurement reveals that sputtered Au film can form good ohmic contact and all the slices have the resistivity within 107 to 109Ωcm. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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