| Autor: |
Joslin, D.L., McHargue, C.J., White, C.W., Evans, N.D. |
| Zdroj: |
Nuclear Instruments and Methods in Physics Research Section B; June 1994, Vol. 91 Issue: 1-4 p562-565, 4p |
| Abstrakt: |
Earlier studies indicated that implantation of zirconium into sapphire at room temperature produced an amorphous layer at a critical composition of approximately 6.5% (cation). Further insight into the amorphization of sapphire has been provided by ion beam mixing studies. Bi-layer couples of ∼ 80 nm thick polycrystalline ZrO2films deposited on the (0001) face of α-Al2O3single crystals were irradiated to 4 × 1016ions/cm2with Kr (475 keV, 20°C) or Cr (340 keV, 20°C or ∼900°C). Transmission electron microscopy showed the unirradiated couples to have sharp, planar interfaces between the films and substrates. Recoil mixing by both ion species gave Zr concentrations greater than 10% (cation) to depths of 10–20 nm. An amorphous layer containing Zr was present at the interface for samples irradiated at room temperature. The sample mixed at the elevated temperature contained a sharp interface similar to the as-deposited sample. The present results suggest that both irradiation-produced damage (defects) and certain chemical species are required to amorphize sapphire. |
| Databáze: |
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