| Autor: |
Studd, Warren B., Johnston, Peter N., Bubb, Ian F., Leech, Patrick W. |
| Zdroj: |
Nuclear Instruments and Methods in Physics Research Section B; March 1994, Vol. 85 Issue: 1-4 p929-932, 4p |
| Abstrakt: |
The quaternary semi-conductor Hg1−x−yCdxMnyTe has been grown by metal organic chemical vapour deposition (MOCVD) using the interdiffused multi-layer process. The layers have been analysed by ion beam (PIXE, RBS, channelling) and related analytical techniques (EDXRF, XRD, RHEED) to obtain stoichiometric and structural information. The analysis shows that all four elements are present throughout the layer and that the elemental concentrations and thickness of the layer vary greatly over the film. Channelling, XRD and RHEED have been combined to show that the layer is polycrystalline. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
