Prediction and characterization of compound phase formation at Ge-metal interfaces in thin film structures

Autor: Marais, T.K., Taylor, E., Ndwandwe, M., Spoelstra, B., Pretorias, R.
Zdroj: Nuclear Instruments and Methods in Physics Research Section B; March 1994, Vol. 85 Issue: 1-4 p183-187, 5p
Abstrakt: First phase formation has been investigated in Ti-Ge, Pd-Ge and Zr-Ge thin film systems by Rutherford backscattering spectrometry (RBS) and X-ray diffraction (XRD). Ti6Ge5, Pd2Ge and ZrGe were found to form first. These results and experimental measurements from the literature are compared with the predictions of the effective heat of formation (EHF) model.
Databáze: Supplemental Index