Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H^+ionimplantation
| Autor: | Hollaander, B., Mantl, S., Liedtke, R., Mesters, S., Herzog, H. J., Kibbel, H., Hackbarth, T. |
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| Zdroj: | Nuclear Instruments and Methods in Physics Research Section B; 1999, Vol. 148 Issue: 1 p200-205, 6p |
| Databáze: | Supplemental Index |
| Externí odkaz: |
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