Enhanced strain relaxation of epitaxial SiGe layers on Si(100) after H^+ionimplantation

Autor: Hollaander, B., Mantl, S., Liedtke, R., Mesters, S., Herzog, H. J., Kibbel, H., Hackbarth, T.
Zdroj: Nuclear Instruments and Methods in Physics Research Section B; 1999, Vol. 148 Issue: 1 p200-205, 6p
Databáze: Supplemental Index