| Autor: |
Tamaki, Tomohiro, Ishida, Shinya, Tomizawa, Yoshikazu, Nakamura, Hiroyuki, Shirai, Yasuhiro, Akiyama, Satoru, Shimizu, Haruka, Yokoyama, Natsuki |
| Zdroj: |
Materials Science Forum; January 2013, Vol. 740 Issue: 1 p950-953, 4p |
| Abstrakt: |
We compare the on-state and switching performance of a 600 V-class Hybrid SiC junction field effect transistor (HJT) and Si superjunction MOSFETs (SJ-MOSs), both of which are packaged in TO-3P full-mold package, as a function of operating frequency. The maximum load current is limited by the package power dissipation rating determined by the maximum junction temperature. Since the HJT is composed of a SiC JFET and a low voltage Si MOSFET, the allowable maximum junction temperature of the HJT is the same as that of SJ-MOSFETs, namely 150 °C. The experimental results show that the maximum operating current of the HJT is comparable to that of SJ-MOSs, but the EMI noise of the HJT is much suppressed due to lower dV/dt. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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