| Autor: |
Häublein, Volker, Temmel, Gerhard, Mitlehner, Heinz, Rattmann, Gudrun, Strenger, Christian, Hürner, Andreas, Bauer, Anton, Ryssel, Heiner, Frey, Lothar |
| Zdroj: |
Materials Science Forum; January 2013, Vol. 740 Issue: 1 p887-890, 4p |
| Abstrakt: |
N-LDMOS and n-LIGBT structures were manufactured with the same dimensions on a 4H-SiC wafer in order to allow for a direct comparison. The comparison of the devices includes output and transfer characteristics, blocking characteristics, and temperature behavior. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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