| Autor: |
Hiyoshi, Toru, Masuda, Takeyoshi, Wada, Keiji, Harada, Shin, Namikawa, Yasuo |
| Zdroj: |
Materials Science Forum; January 2013, Vol. 740 Issue: 1 p506-509, 4p |
| Abstrakt: |
In this paper, we characterized MOS devices fabricated on 4H-SiC (0-33-8) face. The interface state density of SiO2/4H-SiC(0-33-8) was significantly low compared to that of SiO2/4H-SiC(0001). The field-effect channel mobility obtained from lateral MOSFET (LMOSFET) was 80 cm2/Vs, in spite of a high p-well concentration of 5x1017 cm-3 (implantation). The double implanted MOSFET (DMOSFET) fabricated on 4H-SiC(0-33-8) showed a specific on-resistance of 4.0 mΩcm2 with a blocking voltage of 890 V. |
| Databáze: |
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