Determination of the Electrical Capture Process of the EH6-Center in n-Type 4H-SiC

Autor: Weber, Jonas, Beljakowa, Svetlana, Weber, Heiko B., Pensl, Gerhard, Zippelius, Bernd, Kimoto, Tsunenobu, Krieger, Michael
Zdroj: Materials Science Forum; January 2013, Vol. 740 Issue: 1 p377-380, 4p
Abstrakt: Deep Level Transient Spectroscopy (DLTS) investigations at different temperatures and with various filling pulse lengths were performed on n-type 4H-SiC epitaxial layers using Iridium Schottky contacts to determine the electrical capture process of the EH6-center. The temperature dependence of the electrical capture cross section σ ~ T-2.0 suggests a cascade capture process, which is not thermally activated. Together with earlier work by Zippelius et al. [4] this proves the acceptor-type of the EH6-center.
Databáze: Supplemental Index