| Autor: |
Sun, Jian Wu, Kamiyama, Satoshi, Wellmann, Peter, Liljedahl, Rickard, Yakimova, R., Syväjärvi, Mikael |
| Zdroj: |
Materials Science Forum; January 2013, Vol. 740 Issue: 1 p315-318, 4p |
| Abstrakt: |
High quality bulk-like 3C-SiC were grown on on-axis (0001) 6H-SiC substrate by sublimation epitaxy. The microwave photoconductivity decay mapping measurements revealed that this material shows considerable long carrier lifetimes varied from 3.519 to 7.834 μs under the injection level of 3.5×1012 cm-2, which are comparable with the best carrier lifetimes in 4H-SiC layers. The mapping of high resolution x-ray diffraction obtained from the same region shows that smaller carrier lifetimes seem to correspond to the larger FWHM values and vice versa. This shows that long carrier lifetime obtained in 3C-SiC is due to the improvement of the crystal quality. |
| Databáze: |
Supplemental Index |
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