| Autor: |
ul Hassan, Jawad, Booker, Ian, Lilja, Louise, Hallén, Anders, Fagerlind, Martin, Bergman, Peder, Janzén, Erik |
| Zdroj: |
Materials Science Forum; January 2013, Vol. 740 Issue: 1 p173-176, 4p |
| Abstrakt: |
We demonstrate on-axis homoepitaxial growth of 4H-SiC(0001) PiN structure on 3-inch wafers with 100% 4H polytype in the epilayer excluding the edges. The layers were grown with a thickness of 105 µm and controlled n-type doping of 4 x 1014 cm-3.The epilayers were completely free of basal plane dislocations, in-grown stacking faults and other epitaxial defects, as required for 10 kV high power bipolar devices. Some part of the wafer had a lifetime enhancement procedure to increase lifetime to above 2 s using carbon implantation. An additional step of epilayer polishing was adapted to reduce surface roughness and implantation damage. |
| Databáze: |
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