| Autor: |
Kusunoki, Kazuhiko, Yashiro, N., Okada, Nobuhiro, Moriguchi, Kouji, Kamei, Kazuhito, Kado, Motohisa, Daikoku, Hironori, Sakamoto, Hidemitsu, Suzuki, Hiroshi, Bessho, Takeshi |
| Zdroj: |
Materials Science Forum; January 2013, Vol. 740 Issue: 1 p65-68, 4p |
| Abstrakt: |
4H-SiC single crystal with 3-inch diameter was grown by top seeded solution growth (TSSG) technique. We used a new convection control member called “Immersion Guide (IG)” which causes the high and homogenous fluid flow in the solution. As a result, we achieved relatively high growth rate and morphological stability |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
