The effect of dose rate on ion implanted impurity profiles in silicon
| Autor: | Tian, S., Yang, S.-H., Morris, S., Parab, K., Tasch, A. F., Kamenitsa, D., Reece, R., Freer, B., Simonton, R. B., Magee, C. |
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| Zdroj: | Nuclear Instruments and Methods in Physics Research Section B; 1996, Vol. 112 Issue: 1 p144-147, 4p |
| Databáze: | Supplemental Index |
| Externí odkaz: |
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