Feasibility of 250 nm gate patterning using i-line with OPC
Autor: | Driessche, V. Van, Finders, J., Tritchkov, A., Ronse, K., Hove, L. Van den, Tzviatkov, P. |
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Zdroj: | Microelectronic Engineering; 1998, Vol. 41 Issue: 1 p111-116, 6p |
Databáze: | Supplemental Index |
Externí odkaz: |