Feasibility of 250 nm gate patterning using i-line with OPC

Autor: Driessche, V. Van, Finders, J., Tritchkov, A., Ronse, K., Hove, L. Van den, Tzviatkov, P.
Zdroj: Microelectronic Engineering; 1998, Vol. 41 Issue: 1 p111-116, 6p
Databáze: Supplemental Index