| Autor: |
Angermann, Heike, Stürzebecher, U., Kegel, J., Gottschalk, C., Wolke, K., Laades, Abdelazize, Conrad, E., Klimm, C., Stegemann, B. |
| Zdroj: |
Diffusion and Defect Data Part B: Solid State Phenomena; December 2012, Vol. 195 Issue: 1 p301-304, 4p |
| Abstrakt: |
For further enhancement of solar energy conversion efficiency the passivation of silicon (Si) substrate surfaces and interfaces of Si-based solar cell devices is a decisive precondition to reduce recombination losses of photogenerated charge carriers. These losses are mainly controlled by surface charges, the density and the character of rechargeable interface states (Dit) [], which are induced by defects localised in a small interlayer extending over only few Å. Therefore, the application of fast non-destructive methods for characterization of the electronic interface properties directly during the technological process has received an increasing interest in recent years. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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