Autor: |
Murata, Koichi, Neumann, Péter Lajos, Koyano, Tamotsu, Yasutake, Yuhsuke, Nittoh, Koh-ichi, Sakamoto, Kunihiro, Fukatsu, Susumu, Miki, Kazushi |
Zdroj: |
Japanese Journal of Applied Physics; November 2012, Vol. 51 Issue: 11 p11PE05-11PE04 |
Abstrakt: |
We studied the Bi wire-$\delta$-doping process to achieve a high concentration of Bi donors in Si. Our process has two steps: (i) burial of Bi nanowires in Si by molecular beam epitaxy, and (ii) activation of Bi atoms in the $\delta$-doped layer by laser annealing. The peak concentration of Bi atoms in the $\delta$-doped layer is controlled by two parameters: the coverage of surfactant layer, and the growth temperature during the Si cap-layer growth, whose maximum concentration is larger than $10^{20}$ cm-3. Photoluminescence and electrical carrier transport measurements reveal that dense Bi atoms are activated upon heating the area at close to the melting point of Si. As a result, our doping process results in Bi donors in the wire-$\delta$-doped layer with concentration of ${>}10^{18}$ cm-3. This will be useful for establishing next-generation, quantum information processing platform. |
Databáze: |
Supplemental Index |
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