| Autor: |
Aruev, P N, Barysheva, Mariya M, Ber, B Ya, Zabrodskaya, N V, Zabrodskii, V V, Lopatin, A Ya, Pestov, Alexey E, Petrenko, M V, Polkovnikov, V N, Salashchenko, Nikolai N, Sukhanov, V L, Chkhalo, Nikolai I |
| Zdroj: |
Quantum Electronics; October 2012, Vol. 42 Issue: 10 p943-948, 6p |
| Abstrakt: |
The procedure of manufacturing silicon photodiodes with an integrated Zr/Si filter for extreme ultraviolet (EUV) spectral range is developed. A setup for measuring the sensitivity profile of detectors with spatial resolution better than 100 um is fabricated. The optical properties of silicon photodiodes in the EUV and visible spectral ranges are investigated. Some characteristics of SPD-100UV diodes with Zr/Si coating and without it, as well as of AXUV-100 diodes, are compared. In all types of detectors a narrow region beyond the operating aperture is found to be sensitive to the visible light. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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