| Autor: |
Hortelano, Vanesa, Martínez, Oscar, Jiménez, Juan, Wang, Bu Guo, Swider, S., Suscavage, Michael, Bliss, David |
| Zdroj: |
Materials Science Forum; July 2012, Vol. 725 Issue: 1 p63-66, 4p |
| Abstrakt: |
GaN crystals grown in supercritical ammonia by the ammonothermal method were studied by cathodoluminescence (CL), both in image and spectrally resolved modes. The main extended defects and the incorporation of point defects and impurities in different growth sectors were revealed. The influence of the seeds, the role of the growth planes and the changes in the crystal quality during the growth run are discussed. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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