| Autor: |
Hirschauer, B, Chiaia, G, Göthelid, M, Karlsson, U.O |
| Zdroj: |
Thin Solid Films; July 1999, Vol. 348 Issue: 1-2 p3-7, 5p |
| Abstrakt: |
CeO2is an interesting buffer layer material for the growth of YBa2Cu3O7−δoverlayers on Si in devices, with the aim of preventing heat-diffusion due to its excellent lattice matching with Si and YBa2Cu3O7−δ. Epitaxial CeO2-films have been synthesised on Si(111) by pulsed laser deposition. Stoichiometric changes of the CexOy-film depending on the ambient oxygen pressure during the deposition were studied by X-ray photoelectron spectroscopy. A method is presented for growing a sharp interface between CeO2and Si(111). The dependence of the in-plane orientation of the CeO2film on the substrate temperature was investigated by X-ray diffraction. The best films, grown at 700°C, showed full width at half maximum of the rocking curve close to 0.1°, but already at room temperature very highly oriented films with less than 0.2° were synthesised. |
| Databáze: |
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