| Autor: |
Vert, Alexey V., Andarawis, Emad A., Chen, Cheng Po |
| Zdroj: |
Materials Science Forum; May 2012, Vol. 717 Issue: 1 p1265-1268, 4p |
| Abstrakt: |
Silicon carbide based integrated circuits (ICs) have the potential to operate at temperatures exceeding that of conventional semiconductors such as silicon and silicon on insulator. Analog and digital silicon carbide (SiC) based circuits were fabricated and characterized at room temperature and 300°C. An operational amplifier and a ring oscillator were tested for prolonged period of time to evaluate their stability and reliability at 300°C. More than 1,000 hours was achieved with the operational amplifier without failures and the ring oscillator operated for almost 300 hours. |
| Databáze: |
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