| Autor: |
Das, Hrishikesh, Sunkari, Swapna G., Oldham, Timothy, Casady, Janna R. B., Casady, Jeff B. |
| Zdroj: |
Materials Science Forum; May 2012, Vol. 717 Issue: 1 p93-96, 4p |
| Abstrakt: |
In this work we present the epitaxial growth of 4H-SiC on 100mm 4° off-axis substrates grown in a multi-wafer CVD planetary reactor. Highly uniform epitaxial layers having thickness and doping uniformities of 1.7% and 1.4% respectively were grown in the production reactor with optimized process conditions at 8µm/hr and 30µm/hr growth rates. Process optimizations resulted in epitaxial layers with surface roughness (RMS) of 0.32nm. Epitaxial layers with a thickness of 53µm grown with a 30µm/hr growth process had minimal degradation in surface roughness (RMS of 0.39nm). |
| Databáze: |
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