| Autor: |
Tymicki, Emil, Grasza, Krzysztof, Racka, Katarzyna, Łukasiewicz, Tadeusz, Piersa, Miroslaw, Kościewicz, Kinga, Teklińska, Dominika, Diduszko, Ryszard, Skupiński, Paweł, Jakieła, Rafał, Krupka, Jerzy |
| Zdroj: |
Materials Science Forum; May 2012, Vol. 717 Issue: 1 p29-32, 4p |
| Abstrakt: |
In this work results of nitrogen doping in the amount of 0 vol.%, 3 vol.% and 10 vol.% on the growth of the 4H polytype on the 6H-SiC seed are presented. SiC crystals grown by PVT method on the (000-1) C-face of 6H seeds using the open seed backside design have been investigated. Structural and electrical properties of the crystals were studied by different experimental methods. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
