| Autor: |
Tsukajima, J., Arai, K., Takatoh, S., Enokijima, T., Hayashi, T., Yikegaki, T., Kashiwagi, A., Tokunaga, K., Suzuki, T., Fujikawa, T., Usami, S. |
| Zdroj: |
Thin Solid Films; August 1996, Vol. 281 Issue: 1-2 p318-320, 3p |
| Abstrakt: |
Nitrogen K-edge electron energy loss near-edge structure (ELNES) spectra of thin SiNxfilms were measured with a small scattering angle in the reflection mode for the first time. The SiNx films were formed by low pressure chemical vapour deposition (LPCVD) on silicon oxide layers with or without rapid thermal nitridation (RTN) pretreatment. The ELNES spectra were found to be similar to the X-ray absorption near-edge structure (XANES) spectra, and to be sensitive to the outermost SiNxstructures. The ELNES spectra of the silicon oxide and SiNxfilms with RTN pretreatment were similar and independent of the thickness. The ELNES spectra of the SiNxfilms with RTN pretreatment and a thicker SiNxfilm (7.7 nm) without RTN pretreatment were also similar. However, very thin SiNxfilms (thickness, 0.4 or 0.6 nm) without RTN pretreatment showed slightly different ELNES spectra from the thicker film without RTN pretreatment and SiNxfilms with RTN pretreatment. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
|
Full Text from ScienceDirect