Ion beam assisted film growth by high dose implantation of carbon into a liquid medium

Autor: Manory, R.R., Sahagian, R., Bunker, S.N., Armini, A.J.
Zdroj: Thin Solid Films; May 1996, Vol. 278 Issue: 1-2 p87-95, 9p
Abstrakt: A method of thin film growth by ion implantation into a medium of liquid metal is presented. Thin layers of aluminum and indium deposited on silicon and silicon carbide (6H-type) substrates were liquified and implanted with carbon ions (at 190 keV). The resulting layers were characterized by X-ray diffraction, Auger electron spectroscopy and scanning electron microscopy.
Databáze: Supplemental Index