Characterization of different porous silicon structures by spectroscopic ellipsometry

Autor: Fried, M, Lohner, T, Polgár, O, Petrik, P, Vázsonyi, É, Bársony, I, Piel, J.P, Stehle, J.L
Zdroj: Thin Solid Films; April 1996, Vol. 276 Issue: 1-2 p223-227, 5p
Abstrakt: The results of multiparameter fitting of spectroscopic ellipsometric (SE) spectra on porous silicon layers (PSL) were connected with the processing parameters (oxidation, etching time, porosity, argon implantation dose).
Databáze: Supplemental Index