| Autor: |
Kolovos-Vellianitis, D, Kammler, Th, Küppers, J |
| Zdroj: |
Surface Science; June 2001, Vol. 482 Issue: 1 p166-170, 5p |
| Abstrakt: |
The interaction of H atoms with O precovered Cu(100) surfaces was studied with thermal desorption and Auger electron spectroscopies between 90 and 300 K. Gaseous product formation was monitored during H admission to the surface and allowed to elucidate the role of elementary reaction steps. Adsorbed and gaseous water were formed as reaction products, their kinetics and yields depending on the reaction temperature. Three elementary reaction steps were identified, two of which involve gaseous H: hydrogenation of adsorbed O towards adsorbed OH, hydrogenation of adsorbed OH towards adsorbed and gaseous water. As third reaction, recombination of adsorbed OH and H was observed. Below 120 K two sequential hydrogenation steps lead to gaseous and adsorbed water, rate determined by OH hydrogenation. Between 130 and 180 K isothermal desorption of water occurs. Above 190 K recombination of OH and H affects the kinetics. The various mechanisms lead to a complicated temperature dependence of the kinetics of gaseous water formation. At any temperature the reactions lead to a complete hydrogenation of oxygen to water. Abstraction of H from adsorbed water was not observed in accordance with the reaction energetics. |
| Databáze: |
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