| Autor: |
SHINDE, Ninad, MATSUNAMI, Noriaki, FUKUOKA, Osamu, TAZAWA, Masato, SHIMURA, Tetsuo, CHIMI, Yasuhiro, SATAKA, Masao |
| Zdroj: |
Journal of Nuclear Science and Technology; April 2006, Vol. 43 Issue: 4 p382-385, 4p |
| Abstrakt: |
We have investigated 100 keV 15N (90% enriched) implantation effects on Si3N4films on SiO2-glass-substrate. The Si3N4films were prepared by using reactive RF-magnetron-sputter-deposition method in N2(natural isotope abundance) gas at room temperature. The composition and film thickness were measured by Rutherford backscattering spectroscopy (RBS) and optical absorption spectroscopy. The RBS and optical absorption spectroscopy show increase in the film thickness with the stoichiometric composition, by 15N ion implantation. These results and depth distribution of the implanted 15N, which is obtained by nuclear reaction analysis (NRA), lead to formation of Si315N4film (embedded isotope rich nitride film). Enrichment of 15N in the grown silicon-nitride film is estimated to be ∼70%. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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