| Autor: |
Guryanov, G.M., Cirlin, G.E., Petrov, V.N., Polyakov, N.K., Golubok, A.O., Tipissev, S.Ya., Musikhina, E.P., Gubanov, V.B., Samsonenko, Yu.B., Ledentsov, N.N. |
| Zdroj: |
Surface Science; July 1995, Vol. 331 Issue: 1 p414-418, 5p |
| Abstrakt: |
We have performed a scanning tunneling microscopy study of the formation of (In,Ga)AsGaAsand InAsGaAsquantum dot and quantum wire arrays on GaAs(100) and vicinal surfaces during submonolayer molecular beam epitaxy. During the initial stage of strained layer transformation (∼ 2 monolayers of InAs) the formation of well ordered quantum wire arrays along the [001] direction is observed. Further deposition results in dots placed in rows and then in an array of well separated dots. This effect is more pronounced in the case of vicinal surfaces where the dots are oriented along the [001] direction despite the surface is misoriented towards the [0 – 11] direction. Our study provides a new insight into the process of quantum dot and quantum wire arrays formation on GaAs(100) and vicinal surfaces. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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