| Autor: |
Van Steenbergen, Jan Frederik, Ootsuka, Noboru, Buch, Xavier, Icard, Béatrice, Sourd, Claire, Constancias, Christophe, Dalzotto, Bernard, Pain, Laurent |
| Zdroj: |
Proceedings of SPIE; March 2012, Vol. 8323 Issue: 1 p83232M-83232M-8, 749097p |
| Abstrakt: |
In a period where industry strongly struggles to find a cost effective alternative solution to the 193nm double patterning strategy, resist manufacturers actively started to design new resist platforms for the future lithography candidates such as EUV or multi-beam. Chemically amplified resists proved their efficiency until now to reach resolution requirements and simultaneously keeping sensitivity target. Below 20nm, edge roughness starts to play an important role on patterning quality and critical dimension control. Simultaneously non CAR resist are showing attracting resolution progress with reasonable sensitivity levels. In the frame of the multi-beam program IMAGINE, performances of advanced resist platforms have been evaluated at various accelerating voltage: 5kV on the MAPPER multi-beam platform and at 100kV on a VISTEC Gaussian tool. This paper reports on the comparison results obtained on those two types of chemistry schemes in terms of resolution, sensitivity and roughness. |
| Databáze: |
Supplemental Index |
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