| Autor: |
Williams, David M., Groom, Kristian M., Childs, David T. D., Stevens, Ben J., Khamas, Salam, Roberts, Tim S., Taylor, Richard J. E., Hogg, Richard A., Ikeda, Naoki, Sugimoto, Yoshimasa |
| Zdroj: |
Proceedings of SPIE; February 2012, Vol. 8255 Issue: 1 p82550Z-82550Z-11, 8172462p |
| Abstrakt: |
Recently, there has been much interest in a novel type of device, the 2D photonic crystal surface emitting laser (PCSEL). For commercialization of these devices a robust and high reliability manufacturing method is required. Previous GaAs wafer fusion and GaN regrowth techniques have utilised voids within the photonic crystal which suffer from reliability and reproducibility issues. We demonstrate a GaAs based PCSEL structure which uses epitaxial regrowth to completely infill the etched structure. We discuss the design, epitaxy, and operating characteristics of these devices over a range of temperatures. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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