Autor: |
Berger, Jill D., Anthon, Douglas W., Caprara, Andrea, Chilla, Juan L., Govorkov, Sergei V., Lepert, Arnaud Y., Mefferd, Wayne, Shu, Qi-Ze, Spinelli, Luis |
Zdroj: |
Proceedings of SPIE; 2012, Vol. 8242 Issue: 1 p824206-824206-7 |
Abstrakt: |
Optically-pumped semiconductor (OPS) lasers are power-scalable, wavelength-flexible, infrared brightness converters. Adding intra-cavity frequency doubling turns them into efficient, low noise, high power visible laser sources. We report on a laser combining an InGaAs gain medium with an LBO nonlinear crystal to produce more than 20 Watt CW in single transverse mode at 532 nm. Efficient cooling of the single gain chip using advanced mounting techniques is the key to making the laser reliable at high CW powers. A rugged and compact package withstands significant environmental excursions. The laser's low noise makes it suitable for demanding Ti:Sapphire pumping applications. |
Databáze: |
Supplemental Index |
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