Analysis of the gate capacitance measurement technique and its application for the evaluation of hot-carrier degradation in submicrometer MOSFETs
| Autor: | Hsu, C. T., Lau, M. M., Yeow, Y. T. |
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| Zdroj: | Microelectronics Reliability; 2001, Vol. 41 Issue: 2 p201-209, 9p |
| Databáze: | Supplemental Index |
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