Characterization of oxide traps in 0.15 mm2 MOSFETs using random telegraph signals

Autor: Amarasinghe, N. V., Celik-Butler, Z., Vasina, P.
Zdroj: Microelectronics Reliability; 2000, Vol. 40 Issue: 11 p1875-1881, 7p
Databáze: Supplemental Index