| Autor: |
Shtrikman, H., Hanien, Y., Soibel, A., Meirav, U. |
| Zdroj: |
Microelectronics Journal; April-May 1999, Vol. 30 Issue: 4-5 p323-328, 6p |
| Abstrakt: |
We have successfully used (311)A and (511)A GaAs for the realization of high quality two-dimensional hole gas (2DHG) and electrons gas (2DEG) structures, respectively. This study was performed mostly on a back-gated, inverted interface, GaAs/AlGaAs structure, in which a 2DHG or 2DEG is embedded. This particular structure enabled the variation of the 2D carrier concentration over two orders of magnitude in a single device, as well as measurement of extremely low carrier densities in the mid 109cm−2range. This remarkably low carrier concentration achieved both in a 2DHG and in a 2DEG opens new frontiers for the study of mesoscopic phenomena governed by Coulomb interactions between carriers and, in particular, the possible existence of a Wigner crystal. |
| Databáze: |
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