The physics and fabrication of in situ back-gated (311)A hole gas heterojunctions

Autor: Simmons, M. Y., Hamilton, A. R., Kurobe, A., Stevens, S. J., Ritchie, D. A., Pepper, M.
Zdroj: Microelectronics Journal; 1997, Vol. 28 Issue: 8 p795-802, 8p
Databáze: Supplemental Index