| Autor: |
Mouis, M., Gregory, H.J., Denorme, S., Mathiot, D., Ashburn, P., Robbins, D.J., Glasper, J.L. |
| Zdroj: |
Microelectronics Journal; March 1995, Vol. 26 Issue: 2-3 p255-259, 5p |
| Abstrakt: |
Using the most advanced physical models of diffusion, we have simulated boron diffusion in the context of a low thermal budget technology for thin-base integrated bipolar transistors. We demonstrated that simulation was able to account for the base broadening due to arsenic implantation in a monocrystalline emitter. Moreover, even in polysilicon emitter bipolar transistors, where the effect of the emitter implantation is suppressed, we found that the extrinsic base implantations could still induce a non-negligible base broadening. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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