| Autor: |
Spirito, Paolo, Persiano, Giovanni Vito, Strollo, Antonio G.M. |
| Zdroj: |
Microelectronics Journal; January 1993, Vol. 24 Issue: 1-2 p61-74, 14p |
| Abstrakt: |
In this paper the features of power BMFETs are presented. Characteristics in the off and on states are discussed for realistic cell structures, and the effect of the gaussian doping profile of the surface gate region on the blocking voltage is discussed for new BMFET structures halfway between standard vertical JFET and power BJTs. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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