| Autor: |
Rosfariza, Radzali, Mohd, Anas Ahmad, Hassan, Zainuriah, Zainal, Norzaini, Kwong, Yam Fong, Woei, Chin Che, Yusoff, Mohd Zaki Mohd, Bakhori, Siti Khadijah Mohd, Yusof, Yushamdan |
| Zdroj: |
Advanced Materials Research; October 2011, Vol. 364 Issue: 1 p139-143, 5p |
| Abstrakt: |
In this report, the growth of GaN p-n junction on Si (111) substrate by plasma-assisted molecular beam epitaxy (PAMBE) is demonstrated. Doping of the GaN p-n junction has been carried out using Si and Mg as n-type and p-type dopants, respectively. Silicon substrate is used to grow the GaNpn-junction. In order to improve the crystalline quality of the nitride based junction, AlN is used as a buffer layer. The optical properties of the sample have been characterized by photoluminescence (PL) and Raman spectroscopy.PL spectrum shows a strong band edge emission of GaN at ~364nm, indicating good quality of the sample.The presence of peak ~657cm-1 in Raman measurement has exhibited asuccessful doping of Mg in the sample. The structural properties are measured by high-resolution x-ray diffraction (HR-XRD) and scanning electron microscopy (SEM). The cross section of the SEM image of the sample has shown sharp interfaces. |
| Databáze: |
Supplemental Index |
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