Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy
| Autor: | Elsass, C. R., Poblenz, C., Heying, B., Fini, P., Petroff, P. M., DenBaars, S. P., Mishra, U. K., Speck, J. S. |
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| Zdroj: | Journal of Crystal Growth; 2001, Vol. 233 Issue: 4 p709-716, 8p |
| Databáze: | Supplemental Index |
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