| Autor: |
Göckeritz, Robert, Tonisch, Katja, Jatal, Wael, Hiller, Lars, Schwierz, Frank, Pezoldt, Jörg |
| Zdroj: |
Advanced Materials Research; August 2011, Vol. 324 Issue: 1 p427-430, 4p |
| Abstrakt: |
Three-terminal junction devices were realized in graphene grown heteroepitaxially on semiinsulating silicon carbide as well as in AlGaN/GaN heterostructures grown by MOCVD on sapphire containing a two dimensional electron gas. These nanoelectronic devices were fabricated using electron beam lithography. In both types of heterostructures room temperature electrical measurements revealed a pronounced nonlinear electrical behavior of the fabricated nanoelectronic devices. The obtained voltage rectification at room temperature demonstrates the feasibility of func-tional three-terminal junctions in heterostructures consisting of types of high carrier mobility struc-tures than classical III-V semiconductor heterostructures. |
| Databáze: |
Supplemental Index |
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