| Autor: |
Wan, Ning, Guo, Chun Sheng, Feng, Shi Wei, Zhang, Guang Chen, Zhou, Zhou |
| Zdroj: |
Advanced Materials Research; August 2011, Vol. 317 Issue: 1 p1149-1152, 4p |
| Abstrakt: |
The method of evaluation of VDMOS storage failure rate is presented and explained in this paper. To obtain a large number of devices working hours in a short time, the accelerated factor k is brought into the failure rate test, from which the test time can be reduced to 1/k. In this paper, the failure rate test of VDMOS is carried out at 270 ºC about 1500 hours with the accelerator factor k=21.73079. The storage lifetime of VDMOS was calculated over 10 years. The key parameters have been measured and reliability of VDMOS in ten years storage time has been evaluated. |
| Databáze: |
Supplemental Index |
| Externí odkaz: |
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